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Abstract We report initial observations aimed at the characterization of a third interstellar object. This object, 3I/ATLAS or C/2025 N1 (ATLAS), was discovered on 2025 July 1 UT and has an orbital eccentricity ofe ∼ 6.1, perihelion ofq ∼ 1.36 au, inclination of ∼175°, and hyperbolic velocity ofV_∞ ∼ 58 km s⁻¹. We report deep stacked images obtained using the Canada–France–Hawaii Telescope and the Very Large Telescope that resolve a compact coma. Using images obtained from several smaller ground-based telescopes, we find minimal light-curve variation for the object over a ∼4 day time span. The visible/near-infrared spectral slope of the object is 17.1% ± 0.2%/100 nm, comparable to other interstellar objects and primitive solar system small bodies (comets and D-type asteroids). Moreover, 3I/ATLAS will be observable through early 2025 September, then unobservable by Earth-based observatories near perihelion due to low solar elongation. It will be observable again from the ground in late 2025 November. Although this limitation unfortunately prohibits detailed Earth-based observations at perihelion when the activity of 3I/ATLAS is likely to peak, spacecraft at Mars could be used to make valuable observations at this time. 

Abstract Integrated phononics plays an important role in both fundamental physics and technology. Despite great efforts, it remains a challenge to break time-reversal symmetry to achieve topological phases and non-reciprocal devices. Piezomagnetic materials offer an intriguing opportunity as they break time-reversal symmetry intrinsically, without the need for an external magnetic field or an active driving field. Moreover, they are antiferromagnetic, and possibly compatible with superconducting components. Here, we develop a theoretical framework that combines linear elasticity with Maxwell’s equations via piezoelectricity and/or piezomagnetism beyond the commonly adopted quasi-static approximation. Our theory predicts and numerically demonstrates phononic Chern insulators based on piezomagnetism. We further show that the topological phase and chiral edge states in this system can be controlled by the charge doping. Our results exploit a general duality relation between piezoelectric and piezomagnetic systems, which can potentially be generalized to other composite metamaterial systems. 

Abstract The large‐scale growth of semiconducting thin films on insulating substrates enables batch fabrication of atomically thin electronic and optoelectronic devices and circuits without film transfer. Here an efficient method to achieve rapid growth of large‐area monolayer MoSe₂films based on spin coating of Mo precursor and assisted by NaCl is reported. Uniform monolayer MoSe₂films up to a few inches in size are obtained within a short growth time of 5 min. The as‐grown monolayer MoSe₂films are of high quality with large grain size (up to 120 µm). Arrays of field‐effect transistors are fabricated from the MoSe₂films through a photolithographic process; the devices exhibit high carrier mobility of ≈27.6 cm²V^–1s^–1and on/off ratios of ≈10⁵. The findings provide insight into the batch production of uniform thin transition metal dichalcogenide films and promote their large‐scale applications.